Zinc oxide ZnO thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy AFM and X-ray diffraction XRD techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.
"Fabrication of Silver-doped Zinc Oxide Thin Films Through Optimized So" by Reed T. Heintzkill
Johnson Matthey Technol. Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet UV spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides TCO and thin-film transistors TFT. In this paper, the optoelectronic, electronic and other properties that make ZnO attractive for a variety of applications are discussed. Various applications of ZnO thin film and its devices such as light-emitting diodes LED , UV sensors, biosensors, photodetectors and TFT that have been described by various research groups are presented. The dependence of daily life on the products of the semiconductor industry has resulted in enormous growth of this industry.
Modelling zinc oxide thin-film growth
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Reed T. Heintzkill , University of Wisconsin-Milwaukee Follow. Zinc Oxide ZnO has been of significant interest as a Transparent Conductive Oxide TCO given its sizable direct band-gap, and as a potential substitute for Indium-Tin Oxide for use in opto-electronic and piezo-electric devices, due to its comparatively abundant and nontoxic precursor materials. Sol-gel processing is an easy, low-energy method for fabricating ZnO thin films, and there has been increasing interest in doping the compound such to give it p-type semiconductive character. This thesis thoroughly investigates sol-gel processing of ZnO thin solid films, with focus on wet-chemistry sol-gel methods of doping the material with silver both as elemental ions and nanoparticles, in the interest of achieving p-type doped ZnO.